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Etching solutions

NBT has designed etching chemicals for the removal or patterning of metals, sacrificial layers or seed layers for electroplating. The requirements on the solutions depend on the plating sequence. The difference is whether the seed needs to be removed after plating with selectivity to all other materials and least dimension loss, or if the seed needs to be patterned before plating, which requires compatibility with masking resists.

etching solutions.pdf

Etchant Application Features
Au etch 200 Seed patterning/removal Non-toxic, cyanide-free, very small undercut, resist compatible, selectivity to many metals and materials like Ni, Cr, Ti, Al, Ta, Pt; (Cu is etched); 50°C
Au etch 300
     (on request)
Bulk etching
Seed patterning/removal
Non-toxic iodine-based, easy application, resist compatible, significant undercut, (limited) selectivity to plated metals like Cr, Ti; (Ni and Cu are attacked)
Cr etch 200 Adhesion layer patterning
(resist mask)
Alkaline solution, compatible with resist for patterning, RT, good selectivity to many metals like Au, Pt, Ta, Ti, Ni, Cu; (Ag is etched)
TiW etch 100 Barrier layer removal Compatible with resist, low undercut, contains fluoride, RT, selectivity to many metals and materials like Au, Ni, Cr, Sn; (Al and Cu with limitation)
TiW etch 200 Barrier layer patterning
(resist mask)
Compatible with resist, low undercut, no fluorides, RT, selectivity to many metals and materials like Au, Cr, Ni; (Cu is etched)
Cu etch 100 Sacrifical layer removal Alkaline etchant, compatible with resist for patterning or etching thick Cu layers, high undercut, RT, selective to Ni, Au, Ag, Al, Sn, Ti, Ta, Cr, Si, Si2N4, SiO2
Cu etch 150 Seed patterning/removal Alkaline etchant, compatible with resist (e.g. Cu seed layers), selective to Ni, Au, Ag, Al, Sn, Ti, Ta, Cr, Si, Si2N4, SiO2
Cu etch 200 UBM Seed patterning
(resist mask)
Patterning of thin Cu layers, low undercut, compatible with resist, RT, selective to Au, Ni, Cr, Ti, Ta, Sn, Al, Pt)
AX 100 Activator for plating of
nickel on nickel
Acidic pre-dip solution, 40°C application, improves
significantly adhesion, where nickel is plated on nickel
Etching
Etching TiW after plating; Plated Cu/Ni/Au on TiW/Cu seed; No undercut of TiW; Least dimension loss of Cu (~1µm)
Etching Cu seed after plating; Plated Cu/Ni/Au on TiW/Cu seed; No dimension loss of plated Cu
Patterning before plating; Cr/Au seed from the backside of glass wafer; Least undercut, 1µm feature resolved
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