StartseiteSitemap
 
Etching solutions

NBT has designed etching chemicals for the removal or patterning of metals, sacrificial layers or seed layers for electroplating. The requirements on the solutions depend on the plating sequence. The difference is whether the seed needs to be removed after plating with selectivity to all other materials and least dimension loss, or if the seed needs to be patterned before plating, which requires compatibility with masking resists.

etching solutions.pdf

Etchant Application Features
Au etch 100 Seed patterning/removal Cyanide-based, very small undercut, selectivity to many metals and materials, resist compatible
Au etch 200 Seed patterning/removal Non-toxic, cyanide-free, very small undercut, selectivity to many metals and materials, resist compatible
Au etch 300 Seed patterning/removal Non-toxic iodine based, easy application, siginificant undercut, limited selectivitiy to plated metals, resist compatible
Cr etch 100 Adhesion layer etching (after plating) Basic solution, good selectivity to many materials, not compatible with resist
Cr etch 200 Adhesion layer patterning (resist mask) Basic solution, good selectivity to many metals, compatible with resist for patterning
TiW etch 100 Barrier layer etching Non-toxic, low undercut, selectivity to many metals and materials, not compatible with exposed Cu
TiW etch 200 Barrier layer patterning (resist mask) low undercut, selectivity to many metals and materials, compatible with resist
TiW etch 500 Barrier layer etching H2O2 based, medium undercut, semiconductor grade,
not compatible with resist
Cu etch 100 Seed patterning/removal Sacrifical layer etching Alkaline etchant, compatible with resist for patterning or etching thick Cu layers, selective to Ni, Au, Sn, Ti, Cr, Si, Si2N4, SiO2, high undercut
Cu etch 300 Seed patterning (resist mask) Compatible with resist, selective to Au, Ni, Cr, Ti, etching of TiW, patterning of thin layers, low undercut
Cu etch 500 Seed removal Very low dimension loss on plated copper sidewalls, semiconductor grade, not compatible with resist
Etching TiW after plating; Plated Cu/Ni/Au on TiW/Cu seed; No undercut of TiW; Least dimension loss of Cu (~1µm)
Etching Cu seed after plating; Plated Cu/Ni/Au on TiW/Cu seed; No dimension loss of plated Cu
Patterning before plating; Cr/Au seed from the backside of glass wafer; Least undercut, 1µm feature resolved
home  imprint  disclaimer  sitemap  search  GTC | © 2010 by nb technologies |  last updated: March 8th, 2016